Method of making a polysilicon emitter bipolar transistor
US5096840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1990 |
| Grant date | Mar 17, 1992 |
| Priority date | — |
| Expiry date | Aug 15, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive method of making a poly-Si emitter transistor (PET) comprises opening an emitter window in a dielectric (typically SiO.sub.2) layer, and depositing onto the thus exposed surface and/or into the single crystal Si material that underlies the exposed surface at least one atomic species. This deposition step is following by the conventional poly-Si deposition, dopant implantation and "drive-in". In a currently preferred embodiment the novel deposition step comprises a low dose, low energy As implantation (5.times.10.sup.13 -2.times.10.sup.15 atoms/cm.sup.2, 0.1-5 keV). The novel method can result in significantly improved device characteristics, e.g., in a doubling of h.sub.FE, as compared to analogous prior art PETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.