Method of making a semiconductor device
US5100836A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1991 |
| Grant date | Mar 31, 1992 |
| Priority date | — |
| Expiry date | Mar 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-500.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.