Staircase sidewall spacer for improved source/drain architecture
US5102816A · kind A · utility
35Cited by
28References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1991 |
| Grant date | Apr 7, 1992 |
| Priority date | — |
| Expiry date | Mar 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective etching of a conformal nitride layer overlying a conformal oxide layer and a subsequent etching of the oxide layer provide for a staircase shaped sidewall spacer which is used to align source and drain regions during implantation. Extent of the implanted n-/n+ and/or p-/p+ regions within the substrate can be tightly controlled due to the tight dimensional tolerances obtained by the footprint of the spacer. Further the source/drain profiles can be utilized with elevated polysilicon and elevated polysilicon having subsequent salicidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.