Thermally enhanced semiconductor device utilizing a vacuum to ultimately enhance thermal dissipation
US5105259A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1990 |
| Grant date | Apr 14, 1992 |
| Priority date | — |
| Expiry date | Sep 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a heat sink is provided in which an opening through the heat sink enables a vacuum source to be applied to a semiconductor die mounted surface. In one form, a semiconductor die is attached to a mounting surface of a leadframe. The leadframe also has a plurality of leads which are electrically coupled to the semiconductor die. The semiconductor die and portions of the leads encapsulated in a package body. Also incorporated in the package body is a heat sink. The heat sink has an opening which extends through the heat sink and exposes a portion of the mounting surface of the leadframe. The opening is used to apply a vacuum to the mounting surface during the formation of the package body so that the mounting surface and heat sink are held in close proximity. The closeness provides a good thermal conduction path from the semiconductor die to the ambient, thereby enhancing the thermal dissipation properties of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.