Method of making a semiconductor device that comprises p-type III-V semiconductor material
US5106766A · kind A · utility
16Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1990 |
| Grant date | Apr 21, 1992 |
| Priority date | — |
| Expiry date | Oct 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel method of making a semiconductor device that comprises p-type III-V semiconductor material is disclosed. The method comprises heating of a graphite body such that the body serves as a sublimation source of carbon atoms that are incorporated into the III-V semiconductor material. Exemplarily, the carbon doped material is the base of a GaAs-based HBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.