Method for heat processing of silicon
US5110404A · kind A · utility
12Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1990 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Mar 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/125
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a predetermined oxygen precipitate can be obtained uniformly in the crystal growth direction without any reduction especially at the crystal bottom part. The resulting silicon is particularly suitable for manufacture of LSI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.