Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM
US5110754A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1991 |
| Grant date | May 5, 1992 |
| Priority date | — |
| Expiry date | Oct 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is directed to a concept to use a 3-dimensional DRAM capacitor as a one-time non-volatile programming element (programmable antifuse) to make redundancy repair and/or to select other options on a DRAM. The programmable element of the present invention provides some significant advantages, such as a lower programming voltage, which allows use of the DRAM's existing operating supply, and requiring only half of the operating voltage to test the element once programming is accomplished. The lower programming voltage allows for redundancy repair of defective DRAM cells (or selecting other options) to be made after the DRAM die is packaged including after it is installed at a customer's site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.