Patent · US Expired

Dopant sources for CMOS device

US5116778A · kind A · utility

14Cited by

12References

48Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Jacob D. Haskell · Palo Alto, US
Steven C. Avanzino · Cupertino, US
Balaji Swaminathan · Bengaluru, IN

Key dates

Filing date	Feb 5, 1990
Grant date	May 26, 1992
Priority date	—
Expiry date	Feb 5, 2010

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process is provided for doping both sidewalls (26, 28) of isolation trenches (24, 26, 28) and connector regions (46, 48) between sources (58) and gate areas (62) and between drains (60) and gate areas in silicon CMOS devices. Appropriately doped glasses (16, 18, 30) formed on the silicon substrate (14) serve as the source of doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.