Thin film deposition system
US5135629A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Jun 8, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32559
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a system for thin film deposition by vapor growth, the contamination of devices and the formation of particles in the deposited thin film inside the system are prevented by the provision therein of an anti-contamination means which is chosen from among (1) an electrolytic cop-per foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the copper foil, (2) an electrolytic copper foil having a fine-grained thin layer of copper or/and copper oxide formed by copper plating on the matte surface of the foil and coated with a material which is the same as or is harmless and similar to the material to be deposited as a thin film by vapor growth onto the substrate, (3) a corrugated metal foil, and (4) a metal foil formed with a plurality of irregularities by embossing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.