Low dielectric composite substrate
US5139852A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1990 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Mar 30, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.