IC modification with focused ion beam system
US5140164A · kind A · utility
52Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1991 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Jan 14, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/307
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus is provided which includes a FIB column having a vacuum chamber for receiving an IC, means for applying a FIB to the IC, means for detecting secondary charged particles emitted as the FIB is applied to the IC, and means for electrically stimulating the IC as the FIB is applied to the IC. The apparatus may be used, for example, (1) to locate a conductor buried under dielectric material within the IC, (2) for determining milling end-point when using the FIB to expose a buried conductor of the IC, and (3) to verify the repair of an IC step-by-step as the repair is made.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.