Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability

US5141817A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Edward D. Babich · Chappaqua, US
• Michael Hatzakis · Ossining, US
• Richard P. McGouey · Carmel, US
• Sharon L. Nunes · Hopewell Junction, US
• Jurij R. Paraszczak · Pleasantville, US
• Jane M. Shaw · Ridgefield, US

Key dates

• Filing date: Jun 13, 1989
• Grant date: Aug 25, 1992
• Expiry date: Jun 13, 2009

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31721
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.