Method for cooling a plasma electrode system for an etching apparatus
US5155331A · kind A · utility
17Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1990 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Jul 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etching method comprises the steps of setting a substrate to be processed above the surface of a first electrode opposed to a second electrode within a vacuum container, with a clearance formed between the surface of the first electrode and the substrate, supplying a cooling gas to the electrodes with a predetermined flow rate and a pressure, supplying a process gas into the vacuum container, changing the process gas to a plasma, by applying a predetermined electric power across the electrodes, and etching the substrate by means of the plasma of the process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.