Multiple angle implants for shallow implant
US5155369A · kind A · utility
24Cited by
8References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1990 |
| Grant date | Oct 13, 1992 |
| Priority date | — |
| Expiry date | Sep 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An implantation process in which a first dose of ions is implanted to produce a damaged layer through which a second dose of implant ions is directed. The damaged layer scatters the ions in the second dose so that these latter ions need not be directed at an angle to avoid channeling. The second dose is generally significantly higher than the first so that the resulting doping profile is produced primarily by the second dose, which can be directed perpendicular to the surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.