Reactor chamber self-cleaning process
US5158644A · kind A · utility
159Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1991 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Oct 10, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C.sub.2 F.sub.6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet manifold and the wafer supports which are the RF electrodes and, second, a local etch step which uses a relatively high chamber pressure and smaller electrode spacing, to complete the cleaning of the RF electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.