Inventor · Bloomington, MN, US

Peter Keswick

22Patents
16h-index
24Co-inventors
77Inventor score

Filing activity: Oct 10, 1991 → May 15, 2007

Most-cited inventions

PatentTitleAreaCited byStatus
US5399237A Etching titanium nitride using carbon-fluoride and carbon-oxide gas Electricity 259 Expired
US5556501A Silicon scavenger in an inductively coupled RF plasma reactor Electricity 246 Expired
US5158644A Reactor chamber self-cleaning process Emerging Cross-Sectional Technologies 159 Expired
US5423945A Selectivity for etching an oxide over a nitride Electricity 143 Expired
US5888414A Plasma reactor and processes using RF inductive coupling and scavenger temperature control Electricity 120 Expired
US6518195B1 Plasma reactor using inductive RF coupling, and processes Electricity 113 Expired
US6488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode Electricity 99 Expired
US6068784A Process used in an RF coupled plasma reactor Electricity 96 Expired
US6251792A Plasma etch processes Electricity 82 Expired
US6444137B1 Method for processing substrates using gaseous silicon scavenger Electricity 68 Expired
US6545420B1 Plasma reactor using inductive RF coupling, and processes Electricity 61 Expired
US6024826A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 56 Expired
US6218312A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 35 Expired
US6194325A Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography Electricity 24 Expired
US5990017A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 17 Expired
US6036877A Plasma reactor with heated source of a polymer-hardening precursor material Electricity 16 Expired
US6399514B1 High temperature silicon surface providing high selectivity in an oxide etch process Electricity 16 Expired
US6440866B1 Plasma reactor with heated source of a polymer-hardening precursor material Electricity 13 Expired
US6171974A High selectivity oxide etch process for integrated circuit structures Electricity 10 Expired
US6699795B1 Gate etch process Emerging Cross-Sectional Technologies 4 Expired
US7112834B1 Gate etch process Emerging Cross-Sectional Technologies 3 Expired
US7901976B1 Method of forming borderless contacts Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.