Vertically integrated oxygen-implanted polysilicon resistor
US5159430A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1991 |
| Grant date | Oct 27, 1992 |
| Priority date | — |
| Expiry date | Jul 24, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
A method for fabricating a high value, vertically integrated resistor begins with an integrated circuit having an unpassivated upper surface that includes designated circuit nodes to be placed in series with the vertical resistor. A layer of passivating material such as boro-phospho silicate glass is deposited on the upper surface of the integrated circuit. Polysilicon vias are formed that extend through the passivating layer and form an electrical ohmic contact with each designated circuit node. The polysilicon vias are subsequently ion implanted with oxygen or nitrogen to increase the resistance thereof to the final desired resistance, which can be greater than 100 megohms, and as much as a gigohm or a terohm. Finally, the vertical resistor is contacted with a metal layer formed on the surface of the passivating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.