Microwave-excited plasma processing apparatus
US5162633A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 27, 1989 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Jun 27, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B6/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma treatment apparatus for making plasma surface processing of a specimen such as thin-film formation, etching, sputtering or plasma oxidation by use of plasma produced through microwave discharge. In a specimen chamber provided with a specimen table for holding at least one specimen thereon, a microwave is introduced from a direction intersecting a magnetic line of force so as to propagate in the longitudinal direction of an ECR region or in a direction along the plane of the ECR region. Since the microwave is introduced from the transverse direction of the specimen chamber, the provision of a microwave introducing window at an upper portion of the specimen chamber is not required and hence a counter electrode for applying an electric field to the specimen can be disposed at the upper portion of the specimen chamber, thereby making it possible to apply a uniform electric field to the specimen so that the specimen is subjected to a uniform treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.