Diffusion barrier for copper features
US5164332A · kind A · utility
38Cited by
7References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 15, 1991 |
| Grant date | Nov 17, 1992 |
| Priority date | — |
| Expiry date | Mar 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diffusion barrier which reduces the diffusion of a copper feature into an oxygen containing polymer is provided by a copper metal alloy. The diffusion barrier is fabricated by coating a metal on a copper feature, heating the metal and copper feature to form an alloy of the copper feature and the metal, etching the non-alloyed metal which covers the alloy, and depositing an oxygen containing polymer on the alloy. Preferably the metal is aluminum and a copper aluminum alloy diffusion barrier is at least 300 angstroms thick and contains at least 8 percent aluminum on the surface in contact with the polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.