Method to reduce the reflectivity of a semi-conductor metallic surface
US5166093A · kind A · utility
31Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Jul 31, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for layering a low reflectivity metal layer on a semiconductor wafer for decreasing the optical reflectivity and increasing the optical absorptivity of the metal layer for laser processing. The process includes: depositing a metal layer, such as aluminum, over a substrate, roughening the surface of the metal layer by chemical mechanical planarization (CMP) while injecting a silicon oxide slurry over the surface and then laser processing the metal. The roughened metal surface has an increased surface area and irregular surface features that help absorb incident laser radiation with less reflectance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.