Electrically erasable phase change memory
US5166758A · kind A · utility
629Cited by
6References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Jan 18, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.