Patent · US Expired

Silicided structures having openings therein

US5166770A · kind A · utility

10Cited by

5References

6Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Thomas E. Tang · Dallas, US
Che-Chia Wei · Plano, US
Cheng-Eng D. Chen · Richardson, US

Key dates

Filing date	Apr 15, 1987
Grant date	Nov 24, 1992
Priority date	—
Expiry date	Apr 15, 2007

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Preferred embodiments include silicon complementary MOSFETs with titanium silicided junctions (38, 58) and direct contacts of aluminum metallization (61, 62) to the p junctions (58) which avoids the high contact resistance of the silicide (60) to p silicon (58). Preferred embodiments also include silicided polysilicon lines without corresponding silicided MOSFET junctions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.