Cheng-Eng D. Chen
6Patents
5h-index
11Co-inventors
60Inventor score
Filing activity: Apr 15, 1987 → Apr 21, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4864375A | Dram cell and method | Electricity | 50 | Expired |
| US4974051A | MOS transistor with improved radiation hardness | Electricity | 20 | Expired |
| US5026656A | MOS transistor with improved radiation hardness | Emerging Cross-Sectional Technologies | 16 | Expired |
| US9425150B2 | Multi-via interconnect structure and method of manufacture | Electricity | 15 | Active |
| US5166770A | Silicided structures having openings therein | Electricity | 10 | Expired |
| US5047361A | NMOS transistor having inversion layer source/drain contacts | Emerging Cross-Sectional Technologies | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.