Multilayered intermetallic connection for semiconductor devices
US5171642A · kind A · utility
23Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1991 |
| Grant date | Dec 15, 1992 |
| Priority date | — |
| Expiry date | Jan 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12743
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A low copper concentration multilayered, device interconnect metallurgy, comprises an aluminum-copper (<2 weight percent copper) conductor having formed on one of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum from the aluminum-copper conductor. The intermetallic compound is formed so as to contain only the single phase line compound of the intermetallic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.