Etch-resistant deep ultraviolet resist process having an aromatic treating step after development

US5173393A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Recai Sezi · Simmerath, DE
• Michael Sebald · Waischenfeld, DE
• Rainer Leuschner · Regensburg, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE

Key dates

• Filing date: Apr 24, 1990
• Grant date: Dec 22, 1992
• Expiry date: Apr 24, 2010

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/40
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.