Soft bond for semiconductor dies
US5173451A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1992 |
| Grant date | Dec 22, 1992 |
| Priority date | — |
| Expiry date | May 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0723
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a semiconductor integrated circuit die, a semipermanent electrical connection is effected by the use of wirebond techniques, in which the parameters of the wirebond are controlled, so that less bonding force retains the leadwires to the bondpads than the attachment strength of the bondpads to the die. The wirebond techniques include attaching leadwires to bondpads on the die, using ultrasonic wedge bonding. The strength of the bond between the leadwires is significantly less than the attachment strength of the bondpads, preferably by a ratio which ensures that the bondpads are not lifted from the die when the leadwires are removed by breaking the bond between the leadwires and the bondpads. Subsequent to testing and burnin, the bond between the leadwires and the bondpads is severed. The die are then removed from the die cavity plate and the bondpads may then be attached by conventional means. The technique is useful in providing known good die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.