Method of passivating etched mirror facets of semiconductor laser diodes
US5177031A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1991 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | May 30, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.