Apparatus for depositing material into high aspect ratio holes
US5178739A · kind A · utility
276Cited by
6References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Sep 25, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3452
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.