Method of forming a layer of doped crystalline semiconductor alloy material
US5180690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1990 |
| Grant date | Jan 19, 1993 |
| Priority date | — |
| Expiry date | Jul 9, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.