Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride
US5180692A · kind A · utility
9Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1991 |
| Grant date | Jan 19, 1993 |
| Priority date | — |
| Expiry date | Oct 24, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method for forming a boron-containing film of high quality on the surfaces of semiconductor wafers by CVD or epitaxial techniques using reaction gases including at least boron trifluoride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.