Plasma processing method and apparatus using electron cyclotron resonance
US5182495A · kind A · utility
9Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1990 |
| Grant date | Jan 26, 1993 |
| Priority date | — |
| Expiry date | Nov 29, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus using ECR, faces in contact with plasma excepting a substance to be processed are covered by an insulating material. By such configuration, discharge caused between the plasma and the substance to be processed in plasma processing is prevented beforehand.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.