Field effect transistor-bipolar transistor darlington pair
US5187110A · kind A · utility
7Cited by
22References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1991 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Nov 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high frequency amplifying device comprises a field effect transistor-bipolar transistor darlington pair. Such a device combines the main desirable features of both field effect transistors and bipolar transistors, therefore, having a high input impedance that is typical of FETs and a high transconductance (or high current gain) which is typical of bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.