Process for fabricating a local interconnect structure in a semiconductor device
US5190893A · kind A · utility
26Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1991 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Apr 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A local interconnect structure is formed in a semiconductor device. In one form, the semiconductor device has two conductive features (one of 54) and (56) which are to be electrically connected. A layer of metal (62), for instance titanium, is deposited on the device. The layer of metal is patterned to form a strap (64) which connects the two conductive features. After patterning the layer of metal to form the strap, the strap is thermally nitrided to form a conductive metal nitride local interconnect (66).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.