High frequency voltage multiplier for an electrically erasable and programmable memory device
US5191232A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 1992 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Mar 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charge pump has a chain of diode connected MOS transistors to generate a high voltage output. Each of the serially connected MOS transistors has a capacitor with one end connected to the input of one of the transistors. A ring oscillating circuit receives an enable signal and generates a plurality of oscillating signals. Each oscillating signal has the same frequency and is supplied to the second end of a capacitor. Between each capacitor the ring oscillating circuit has an inverter which inverts the supplied oscillating signal. Thus, immediately adjacent capacitors are provided with an inverse oscillating signal. In this manner, the charge pump can be operated at a high frequency, drawing smoother current from the power supply, with greater capacitive loading distributed unto each stage of the oscillator. Finally, breakdown prevention needs only applied to the anode of the last diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.