Method of page-mode programming flash EEPROM cell arrays
US5191556A · kind A · utility
26Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1991 |
| Grant date | Mar 2, 1993 |
| Priority date | — |
| Expiry date | Mar 13, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved method of programming EEPROM cells in a memory array, wherein a cell page can be programmed and erased without disturbing other cell pages in the array, and further, an individual cell can be reprogrammed without disturbing other cells in the array. The user can selectively erase and program cells in the array by controlling the operating conditions of the word lines, bit lines, and Vss lines coupled to those cells according to the method of the present invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.