Method of forming field emitter device with diamond emission tips
US5199918A · kind A · utility
123Cited by
19References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Nov 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter device comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The device is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.