Optimizing doping control in short channel MOS
US5212106A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1992 |
| Grant date | May 18, 1993 |
| Priority date | — |
| Expiry date | May 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process is provided for fabricating short channel complementary metal oxide semiconductor devices. The devices comprise source and drain regions separated by gate regions. The process comprises forming a shallow channel doping region (12') beneath the surface of a semiconductor (10) and forming source-drain regions (20') of opposite conductivity type (formerly known as lightly doped drain structures) on either side of the shallow doping region. A gate oxide (16) is formed on the surface of the semiconductor above the shallow channel doping region and a gate electrode (18) is formed to the gate oxide prior to the formation of the shallow channel doping region. The process permits spacing of the channel doping from the source-drain doping with self-alignment. Further, the doping of the source-drain regions is not constrained to the values of the lightly-doped structures of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.