Inventor · Los Altos, CA, US

Darrell M. Erb

47Patents
17h-index
37Co-inventors
81Inventor score

Filing activity: Sep 2, 1975 → Sep 7, 2004

Most-cited inventions

PatentTitleAreaCited byStatus
US6107186A High planarity high-density in-laid metallization patterns by damascene-CMP processing Electricity 57 Expired
US4650544A Shallow groove capacitor fabrication method Electricity 46 Expired
US4093872A Charge coupled device with input for direct injection of signal Electricity 41 Expired
US6444567B1 Process for alloying damascene-type Cu interconnect lines Electricity 40 Expired
US5837618A Uniform nonconformal deposition for forming low dielectric constant insulation between certain conductive lines Electricity 40 Expired
US5691573A Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines Electricity 39 Expired
US6455425B1 Selective deposition process for passivating top interface of damascene-type Cu interconnect lines Electricity 37 Expired
US5770519A Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device Electricity 35 Expired
US6979625B1 Copper interconnects with metal capping layer and selective copper alloys Electricity 34 Expired
US4707457A Method for making improved contact for integrated circuit structure Electricity 28 Expired
US5776834A Bias plasma deposition for selective low dielectric insulation Electricity 27 Expired
US6319834A Method and apparatus for improved planarity metallization by electroplating and CMP Electricity 26 Expired
US6140239A Chemically removable Cu CMP slurry abrasive Electricity 24 Expired
US4905065A High density dram trench capacitor isolation employing double epitaxial layers Electricity 24 Expired
US6319819A Process for passivating top interface of damascene-type Cu interconnect lines Electricity 23 Expired
US4507159A Method of manufacturing high capacity semiconductor capacitance devices Electricity 20 Expired
US6465889B1 Silicon carbide barc in dual damascene processing Electricity 20 Expired
US5955786A Semiconductor device using uniform nonconformal deposition for forming low dielectric constant insulation between certain conductive lines Electricity 17 Expired
US7132363B2 Stabilizing fluorine etching of low-k materials Electricity 15 Expired
US6207577A Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer Electricity 15 Expired
US7071564B1 Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migration Electricity 14 Expired
US6831003B1 Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration Electricity 14 Expired
US5212106A Optimizing doping control in short channel MOS Electricity 13 Expired
US4158238A Stratified charge ram having an opposite dopant polarity MOSFET switching circuit Electricity 12 Expired
US4247916A Memory device in which one type carrier stored during write controls the flow of the other type carrier during read Physics 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.