Selective etching process for boron nitride films
US5217567A · kind A · utility
16Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1992 |
| Grant date | Jun 8, 1993 |
| Priority date | — |
| Expiry date | Feb 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for etching a film of boron nitride with high selectivity to a layer of silicon dioxide or silicon nitride. The process involves exposing the film to a plasma formed from a mixture of an oxygen-containing gas, such as oxygen, and a small amount of a fluorine-containing gas, such as CF.sub.4. The process provides a high etch rate and anisotropic profiles, as well as good uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.