David M. Dobuzinsky
55Patents
20h-index
112Co-inventors
91Inventor score
Filing activity: Jan 2, 1991 → Apr 18, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5563105A | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element | Electricity | 303 | Expired |
| US7118986B2 | STI formation in semiconductor device including SOI and bulk silicon regions | Electricity | 240 | Expired |
| US5536360A | Method for etching boron nitride | Emerging Cross-Sectional Technologies | 236 | Expired |
| US5763315A | Shallow trench isolation with oxide-nitride/oxynitride liner | Electricity | 109 | Expired |
| US5330935A | Low temperature plasma oxidation process | Emerging Cross-Sectional Technologies | 105 | Expired |
| US5468687A | Method of making TA.sub.2 O.sub.5 thin film by low temperature ozone plasma annealing (oxidation) | Electricity | 91 | Expired |
| US6046487A | Shallow trench isolation with oxide-nitride/oxynitride liner | Electricity | 90 | Expired |
| US5876788A | High dielectric TiO.sub.2 -SiN composite films for memory applications | Electricity | 64 | Expired |
| US5412246A | Low temperature plasma oxidation process | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6570256B2 | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates | Electricity | 48 | Expired |
| US5759746A | Fabrication process using a thin resist | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5998100A | Fabrication process using a multi-layer antireflective layer | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5643823A | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Emerging Cross-Sectional Technologies | 38 | Expired |
| US8008713B2 | Vertical SOI trench SONOS cell | Electricity | 35 | Active |
| US7560360B2 | Methods for enhancing trench capacitance and trench capacitor | Electricity | 32 | Active |
| US5656535A | Storage node process for deep trench-based DRAM | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6964897B2 | SOI trench capacitor cell incorporating a low-leakage floating body array transistor | Electricity | 29 | Expired |
| US5747866A | Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6740539B2 | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates | Electricity | 22 | Expired |
| US5455204A | Thin capacitor dielectric by rapid thermal processing | Electricity | 21 | Expired |
| US5622596A | High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using a stoichiometrically altered nitride etch stop | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7514323B2 | Vertical SOI trench SONOS cell | Electricity | 17 | Active |
| US6153474A | Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5217567A | Selective etching process for boron nitride films | Electricity | 16 | Expired |
| US6869542B2 | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials | Electricity | 15 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.