Bilayer metallization cap for photolithography

US5219788A · kind A · utility

Assignee

• IBM Corporation · US

Inventors

• John R. Abernathey · Jericho, US
• Timothy H. Daubenspeck · Colchester, US
• Stephen E. Luce · Underhill, US
• Denis J. Poley · South Burlington, US
• Rosemary A. Previti-Kelly · South Burlington, US
• Gary P. Viens · Colchester, US
• Jung Han Yoon · Seoul, KR

Key dates

• Filing date: Feb 25, 1991
• Grant date: Jun 15, 1993
• Expiry date: Feb 25, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/952
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO.sub.2. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.