Method for forming pitch independent contacts and a semiconductor device having the same

US5219793A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Kent J. Cooper · Austin, US
• Jung-Hui Lin · Austin, US
• Scott S. Roth · Austin, US
• Bernard J. Roman · Austin, US
• Carlos Mazure · Austin, US
• Bich-Yen Nguyen · Austin, US
• Wayne J. Ray · Austin, US

Key dates

• Filing date: Jun 3, 1991
• Grant date: Jun 15, 1993
• Expiry date: Jun 3, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/97
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A contact is formed in a semiconductor device (10), independent of underlying topography or pitch. In one method of the present invention, an insulating layer (18) is deposited over a semiconductor substrate (12). An etch stop layer (20) is deposited over the insulating layer. A frame structure (22) is formed on the etch stop material and defines at least one contact region (23 and/or 25) within which the etch stop material is exposed. The exposed portions of the etch stop material are removed from the contact region to expose a portion of the insulating layer. The exposed portion of the insulating layer is then anisotropically etched and at least one contact (30 and/or 32) is formed in the contact region. Depending on where the contact region is positioned, either a self-aligned contact or a non-self-aligned contact may be formed, or both types of contacts may be formed simultaneously.