Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch
US5221424A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1991 |
| Grant date | Jun 22, 1993 |
| Priority date | — |
| Expiry date | Nov 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is described for removing from an integrated circuit structure photoresist remaining after a metal etch which also removes or inactivates a sufficient amount of any remaining chlorine residues remaining from the previous metal etch to inhibit corrosion of the remaining metal for at least 24 hours. The process includes a first stripping step associated with a plasma, using either O.sub.2 gas and one or more fluorocarbon gases, or O.sub.2 gas and N.sub.2 gas; followed by a subsequent step using a combination of H.sub.2 O.sub.2 /H.sub.2 O vapors, O.sub.2 gas, and optionally N.sub.2 gas associated with a plasma. Preferably, the plasma is generated in a microwave plasma generator located upstream of the stripping chamber, and the stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.