Method for producing a resist structure

US5229258A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Recai Sezi · Simmerath, DE
• Horst Borndorfer · Erlangen, DE
• Eva Rissel · Forchheim, DE
• Rainer Leuschner · Regensburg, DE
• Michael Sebald · Waischenfeld, DE
• Hellmut Ahne · Königsee, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE

Key dates

• Filing date: Apr 8, 1991
• Grant date: Jul 20, 1993
• Expiry date: Apr 8, 2011

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/265
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.