Method for forming an isolated film on a semiconductor device
US5229315A · kind A · utility
68Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1992 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Jan 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for forming an isolated film on a semiconductor device in the shape of a cylinder to shorten the heat treatment process and to prevent a micro-loading effect of filling of a field-isolated oxide film. The method comprises the step of forming a deep, narrow groove, then filling up the groove with an oxide film, and then oxidizing a polysilicon layer encircled by the groove to form an isolated film in the shape of a cylinder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.