Semiconductor apparatus and semiconductor package
US5229643A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1991 |
| Grant date | Jul 20, 1993 |
| Priority date | — |
| Expiry date | Jul 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The heat transfer path (the heat radiating portion) from a position very near the semiconductor device as the heat source to the surface of the semiconductor apparatus is made of a material having a large heat conductivity thereby to more rapidly transfer the heat generated in the p-n junction to the surface of the semiconductor apparatus or the outside. This arrangement can cope with that the calorific power is increased as the integration is increased. The formation of the good heat conductive material from the surface of the apparatus to the heat source through the multilayer structure film can be attained by means of the CVD technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.