Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development

US5234793A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Michael Sebald · Waischenfeld, DE
• Recai Sezi · Simmerath, DE
• Rainer Leuschner · Regensburg, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE

Key dates

• Filing date: Apr 24, 1990
• Grant date: Aug 10, 1993
• Expiry date: Apr 24, 2010

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/405
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photolithographic method for structure generation in bilayer processes is provided. Pursuant to the method, a dimensional reserve is produced in a top resist structure by chemical treatment with a bulging agent. The expansion preferably is performed by treatment with an aqueous solution. The expansion can be set such that the dimensional loss to be anticipated in further etchings of the bottom resist or, respectively, of the wafer is exactly compensated for.