Photostructuring method

US5234794A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Michael Sebald · Waischenfeld, DE
• Rainer Leuschner · Regensburg, DE
• Recai Sezi · Simmerath, DE
• Siegfried Birkle · Höchstadt an der Aisch, DE
• Hellmut Ahne · Königsee, DE

Key dates

• Filing date: Mar 10, 1992
• Grant date: Aug 10, 1993
• Expiry date: Mar 10, 2012

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/40
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.