Method of manufacturing semiconductor device
US5240554A · kind A · utility
38Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1992 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Jan 22, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.