Optimized helical resonator for plasma processing
US5241245A · kind A · utility
121Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | May 6, 1992 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | May 6, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.